Semiconductor Heteroepitaxy
Source abstract
Abstract
The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of high-quality materials and complex designs [...]
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science, University of Milano-Bicocca, 20125 Milan, Italy
References (5)
Show source-provided references
1. Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., and Capellini, G. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10.10.3390/cryst10030179 ↗
2. Spindlberger, L., Aberl, J., Polimeni, A., Schuster, J., Hörschläger, J., Truglas, T., Groiss, H., Schäffler, F., Fromherz, T., and Brehm, M. (2020). In-Situ Annealing and Hydrogen Irradiation of Defect-Enhanced Germanium Quantum Dot Light Sources on Silicon. Crystals, 10.10.3390/cryst10050351 ↗
3. Park, J.-S., Tang, M., Chen, S., and Liu, H. (2020). Heteroepitaxial Growth of III-V Semiconductors on Silicon. Crystals, 10.10.3390/cryst10121163 ↗
4. Bollani, M., Fedorov, A., Albani, M., Bietti, S., Bergamaschini, R., Montalenti, F., Ballabio, A., Miglio, L., and Sanguinetti, S. (2020). Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study. Crystals, 10.10.3390/cryst10020057 ↗
5. Hu, H., Zhang, B., Liu, L., Xu, D., Shao, Y., Wu, Y., and Hao, X. (2020). Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals, 10.10.3390/cryst10020141 ↗