journal article·2022-01

A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Fanlu Zhang, Xutao Zhang, Ziyuan Li, Ruixuan Yi, Zhe Li, Naiyin Wang, Xiaoxue Xu, Zahra Azimi, Li Li, Mykhaylo Lysevych, Xuetao Gan, Yuerui Lu, Hark Hoe Tan, Chennupati Jagadish, Lan Fu

Advanced Functional Materials· Volume 32· Issue 3
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Abstract

Abstract III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW nanowires are based on the wurtzite phase and exhibit non‐uniform morphology due to the complex heterostructure growth, making it challenging to incorporate multiple‐QWs (MQW) for optoelectronic applications. Here, a new strategy for the growth of InGaAs/InP MQW nanowire arrays by selective area metalorganic vapor phase epitaxy is reported. It is revealed that {110} faceted InP nanowires with mixed zincblende and wurtzite phases can be achieved, forming a critical base for the subsequent growth of highly‐uniform, taper‐free, hexagonal‐shaped MQW nanowire arrays with excellent optical properties. Room‐temperature lasing at the wavelength of ≈1 µm under optical pumping is achieved with a low threshold. By incorporating dopants to form an n+‐i‐n+ structure, InGaAs/InP 40‐QW nanowire array photodetectors are demonstrated with the broadband response (400–1600 nm) and high responsivities of 2175 A W−1 at 980 nm outperforming those of conventional planar InGaAs photodetectors. The results show that the new growth strategy is highly feasible to achieve high‐quality InGaAs/InP MQW nanowires for the development of future optoelectronic devices and integrated photonic systems.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2601 Australia

MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi'an Shaanxi 710129 China

Advanced Research Computing Virginia Tech Blacksburg VA 24061 USA

Institute for Biomedical Materials and Devices Faculty of Science University of Technology Sydney Sydney NSW 2007 Australia

Australian National Fabrication Facility ACT Node Research School of Physics The Australian National University Canberra ACT 2601 Australia

Research School of Electrical, Energy and Materials Engineering College of Engineering and Computer Science The Australia National University Canberra ACT 2601 Australia

Australian Research Council Centre of Excellence for Transformative Meta‐Optical Systems Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2601 Australia

Funding

Australian Research Council · Australian National Fabrication Facility · National Computational Infrastructure · National Natural Science Foundation of China · China Postdoctoral Science Foundation

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