RF-Characterization of HZO Thin Film Varactors
Source abstract
Abstract
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fraunhofer IPMS, Center Nanoelectronic Technologies, An der Bartlake 5, 01109 Dresden, Germany
Faculty of Electrical and Computer Engineering, TU Dresden, Mommsenstr. 15, 01067 Dresden, Germany
Funding
Fraunhofer-Gesellschaft
References (29)
Show source-provided references
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