Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties
Source abstract
Abstract
Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3 films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3 Ω·cm). However, the Bi2O3 film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102 Ω·cm). The I–V curve of TZO/Bi2O3 composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3 films.
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Science, Beibu Gulf University, Qinzhou 535011, China
College of Electronic Information, Guangxi Minzu University, Nanning 530006, China
College of Physical Science and Engineering, Guangxi University, Nanning 530004, China
Funding
National Natural Science Foundation of China (NSFC) · Doctoral Scientific Research Staring Foundation of Beibu Gulf University in China
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