Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

Abstract The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this study, the solution‐processed high‐κ oxide dielectric shell is configured uniformly onto the surface of GaSb NWs, contributing to the excellent bias‐stress stability of as‐constructed p‐type NWFETs. Owing to the interdiffusion between Al and Ga, the oxide dielectric shell is Ga‐AlO_x. With an optimal oxide dielectric shell, the as‐constructed p‐type GaSb NWFETs show an insignificant attenuation of on‐state current (within 10%) and a negligible negative shift of threshold voltage under 60 min continuous gate bias, which is far better than that of pristine GaSb NWFETs, resulting from the electric double layer effect. Benefiting from the excellent bias‐stress stability, when configured into the near‐infrared photodetector, NWFET exhibits desirable stability and gate‐controlled photodetection behaviors. I_dark and I_light are effectively modulated by gate voltage, resulting in gate‐controlled responsivity and gain under the illumination of 1550 nm laser. In the end, the as‐constructed bias‐stress stability NWFET demonstrates expected gate‐controlled photodetection imaging and photocommunication ability. The strategy of solution‐processed oxide dielectric shell promises high bias‐stress stability NWFETs for gate‐controlled photodetection and photocommunication.