Misfit dislocations in lattice-mismatched epitaxial films
Source abstract
Abstract
Abstract This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.
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Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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