Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

An overview of a device physics formulation of induced gap state (IGS) modeling is presented. IGS modeling attempts to explain the electronic properties of metal (M), semiconductor (S), or insulator (I) surfaces and interfaces in terms of intrinsic behavior associated with evanescent states arising from the termination of a bulk material at a surface or interface. Specifically, semiconductor and insulator surfaces as well as metal-semiconductor (MS), semiconductor-semiconductor (SS), insulator-insulator (II), insulator-semiconductor (IS), metal-metal (MM), metal-insulator-metal (MIM), and metal-insulator-semiconductor (MIS) interfaces are considered. Key aspects of this review involve the development of the electrostatic foundations of IGS modeling and the utilization of equivalent circuits and energy band diagrams to elucidate surface and interface electronic behavior.