Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation

Ingolf Lindau; Tomasz Kendelewicz

doi:10.1080/01611598608241250

journal article·1986-01

Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation

Ingolf Lindau, Tomasz Kendelewicz

Critical Reviews in Solid State and Materials Sciences· Volume 13· Issue 1

Publisher page

Source abstract

Abstract

Abstract More than 100 years ago, Braun' reported that the point contacts between a thin metal wire and a crystal showed a resistance dependent on the polarity of the applied voltage. The first metal-semiconductor (MS) rectifying contact had been detected. Since then, the MS interface has played an important role in many technological developments. However, a full understanding of the physics behind the barrier height has so far been elusive. and it remains a very active research field today.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references

1. Braun F. · Pogg. Ann. · 1874 · 153 · 556

2. 10.1007/BF0134011610.1007/BF01340116 ↗

3. 10.1103/PhysRev.71.71710.1103/PhysRev.71.717 ↗

4. 10.1098/rspa.1932.009710.1098/rspa.1932.0097 ↗

5. Tamm I. · Phys. Z. Sowjetunion. · 1932 · 1 · 733

6. 10.1103/PhysRev.56.31710.1103/PhysRev.56.317 ↗

7. 10.1103/PhysRev.138.A168910.1103/PhysRev.138.A1689 ↗

8. 10.1103/PhysRevB.13.246110.1103/PhysRevB.13.2461 ↗

9. 10.1103/PhysRevB.24.437210.1103/PhysRevB.24.4372 ↗

10. 10.1103/PhysRevLett.22.143310.1103/PhysRevLett.22.1433 ↗

11. 10.1103/PhysRevB.17.152810.1103/PhysRevB.17.1528 ↗

12. 10.1103/PhysRevB.17.504410.1103/PhysRevB.17.5044 ↗

13. 10.1116/1.57017610.1116/1.570176 ↗

14. 10.1016/0040-6090(82)90088-810.1016/0040-6090(82)90088-8 ↗

15. 10.1103/PhysRevB.15.215410.1103/PhysRevB.15.2154 ↗

16. 10.1116/1.56899110.1116/1.568991 ↗

17. 10.1103/PhysRevB.13.246110.1103/PhysRevB.13.2461 ↗

18. 10.1103/PhysRevB.24.437210.1103/PhysRevB.24.4372 ↗

19. 10.1016/0040-6090(83)90570-910.1016/0040-6090(83)90570-9 ↗

20. 10.1016/0038-1098(76)90736-510.1016/0038-1098(76)90736-5 ↗

21. 10.1116/1.57018110.1116/1.570181 ↗

22. 10.1103/PhysRevLett.42.109410.1103/PhysRevLett.42.1094 ↗

23. 10.1116/1.57018010.1116/1.570180 ↗

24. 10.1116/1.57018210.1116/1.570182 ↗

25. 10.1116/1.57065210.1116/1.570652 ↗

26. 10.1116/1.57060710.1116/1.570607 ↗

27. 10.1103/PhysRevB.26.442910.1103/PhysRevB.26.4429 ↗

28. 10.1116/1.131871110.1116/1.1318711 ↗

29. 10.1103/PhysRevLett.40.26010.1103/PhysRevLett.40.260 ↗

30. 10.1103/PhysRevLett.37.31210.1103/PhysRevLett.37.312 ↗

31. 10.1116/1.57058410.1116/1.570584 ↗

32. 10.1116/1.131871010.1116/1.1318710 ↗

33. 10.1016/0167-5729(82)90001-210.1016/0167-5729(82)90001-2 ↗

34. Poate J. M. · 1978

35. Kane P. F. · 1978

36. Properties Interfaces, Ultramicroscopy. Proc. Conf. Atomic-Scale Struct. Vol. 14, 1/2

37. 10.1016/0167-5729(83)90006-710.1016/0167-5729(83)90006-7 ↗

38. Stöhr J. · 1981

39. Stöhr J. · Surf. Sci. Rep. · 1983 · 134 · 81310.1016/0039-6028(83)90076-6 ↗

40. Proc. 10th Int. Conf. Atomic Collisions in Solids. Nucl. Instr. Meth. Vol. 230,

41. 10.1103/PhysRevLett.50.12010.1103/PhysRevLett.50.120 ↗

42. Cardona M. · 1979 · 26

43. Lindau I. · 1981 · 4

44. Bachrach R. Z. · 1984

45. 10.1016/0038-1101(83)90165-X10.1016/0038-1101(83)90165-X ↗

46. 10.1016/0368-2048(74)80024-110.1016/0368-2048(74)80024-1 ↗

47. Lindau I. · 1980

48. 10.1103/PhysRevB.28.303110.1103/PhysRevB.28.3031 ↗

49. 10.1103/PhysRevB.18.554510.1103/PhysRevB.18.5545 ↗

50. 10.1016/0378-5963(82)90051-410.1016/0378-5963(82)90051-4 ↗

51. 10.1016/0039-6028(83)90534-410.1016/0039-6028(83)90534-4 ↗

52. 10.1116/1.57058310.1116/1.570583 ↗

53. 10.1103/PhysRevB.18.180010.1103/PhysRevB.18.1800 ↗

54. 10.1016/0368-2048(79)80016-X10.1016/0368-2048(79)80016-X ↗

55. 10.1116/1.58255010.1116/1.582550 ↗

56. 10.1116/1.58289410.1116/1.582894 ↗

57. 10.1063/1.9064210.1063/1.90642 ↗

58. 10.1116/1.58283810.1116/1.582838 ↗

59. 10.1116/1.57176410.1116/1.571764 ↗

60. 10.1116/1.58303510.1116/1.583035 ↗

61. The number of defects necessary to pin the Fermi level depend strongly on doping of the semiconductor but also on their distribution. (For details see References 62 and 63.)

62. 10.1103/PhysRevB.28.206010.1103/PhysRevB.28.2060 ↗

63. Harrison W. A. · J. Vac. Sci. Technol. · 1985 · 33 · 123110.1116/1.583046 ↗

64. Newman N. · Phys. Rev.

65. 10.1103/PhysRevLett.45.65610.1103/PhysRevLett.45.656 ↗

66. 10.1116/1.58260210.1116/1.582602 ↗

67. 10.1063/1.9456810.1063/1.94568 ↗

68. 10.1116/1.57244110.1116/1.572441 ↗

69. Kendelewicz, T., Petro, W. G., Williams, M. D., Pan, S. H., Lindau, I. and Spicer, W. E. Materials Research Soc. Symp. Proc. Edited by: Baglin, J. E. E. Vol. 25, pp.323New York: Eisevier.

70. 10.1103/PhysRevB.29.661410.1103/PhysRevB.29.6614 ↗

71. 10.1063/1.9464510.1063/1.94645 ↗

72. 10.1116/1.57176610.1116/1.571766 ↗

73. Williams, R. S. unpublished

74. 10.1016/0040-6090(80)90426-510.1016/0040-6090(80)90426-5 ↗

75. Pan, S. H., Kendelewicz, T., Petro, W. G., Williams, M. D., Lindau, I. and Spicer, W. E. Materials Research Soc. Symp. Proc. Edited by: Baglin, J. E. E. Vol. 25, pp.335New York: Elsevier.

76. 10.1116/1.58259910.1116/1.582599 ↗

77. Sinha, A. K. and Poate, J. M. 1978.Thin Films Interdiffusion and Reactions, Edited by: Poale, J. M., Tu, K. N. and Mayer, J. W. 407New York: John Wiley & Sons. Weaver, J. H., Grioni, M., and Joyce,J., Phys. Rev. B.,315348, 1985

78. Bachrach, R. Z., Bauer, R. S., McMenamin, J. C. and Bianconi, A. Proc. 14th Conf. Phys. Semicond. Edited by: Wilson, B. L. H. pp.1073Bristol: Institute of Physics.

79. 10.1103/PhysRevB.30.580010.1103/PhysRevB.30.5800 ↗

80. 278 For discussion and references, see Reference 37, and Reference 79

81. 10.1103/PhysRevB.28.705110.1103/PhysRevB.28.7051 ↗

82. 10.1016/0039-6028(83)90536-810.1016/0039-6028(83)90536-8 ↗

83. 10.1103/PhysRevB.31.650310.1103/PhysRevB.31.6503 ↗

84. 10.1063/1.9586710.1063/1.95867 ↗

85. 10.1016/0040-6090(82)90131-610.1016/0040-6090(82)90131-6 ↗

86. 10.1116/1.57336810.1116/1.573368 ↗

87. 10.1063/1.33452110.1063/1.334521 ↗

88. 10.1116/1.58260410.1116/1.582604 ↗

89. Skeath P. · 1982

90. Williams, M. D., Nogami, J., Kendelewicz, T., List, R. S., Bertness, K. A., Lindau, L. and Spicer, W. E. submitted

91. 10.1116/1.58284210.1116/1.582842 ↗

92. Landgren G. · Bull. Am. Phys. Soc. · 1984 · 29 · 552

93. 10.1103/PhysRevLett.48.51210.1103/PhysRevLett.48.512 ↗

94. 10.1116/1.57251710.1116/1.572517 ↗

95. 10.1063/1.32353910.1063/1.323539 ↗

96. Pauling, L. 1960.The Nature of the Chemical Bond, 93Ithaca, New York: Cornell University Press.

97. Spicer, W. E., Kendelewicz, T., Newman, N., Chin, K. K. and Lindau, I. Formation Semiconduct. Proc. Int. Conf. Marseille: Interfaces. In press

98. Newman N. · Phys. Rev.

99. 10.1103/PhysRevLett.10.47110.1103/PhysRevLett.10.471 ↗

100. 10.1063/1.9459910.1063/1.94599 ↗