A review of recent developments in aluminum gallium oxide thin films and devices
Source abstract
Abstract
Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL, USA
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