Molecular beam epitaxy of III–V semiconductors
Source abstract
Abstract
Abstract Molecular beam epitaxy (MBE) has been instrumental in the advancement of the physics and technology of semiconductors that has occurred over the last few decades. The III-V material system has led the way in these new developments. This article discusses the technology of III-V MBE, highlights selected topics in its development, discusses growth mechanisms, and mentions possible future directions.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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