Processing, Structure, Properties, and Applications of PZT Thin Films
Source abstract
Abstract
There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic waves to electrical signal in sonar detectors and convert electric field into motion in actuators and mechanical scanners requiring fine control. In a broader sense the ferroelectric materials can be used for pyroelectric and piezoelectric sensors, voltage tunable capacitors, infrared detectors, surface acoustic wave (SAW) devices, microactuators, and nonvolatile random-access memories (NVRAMs), including the potential production of one transistor memory cells, and applications requiring nonlinear optic components. Another set of potential applications seeks to exploit the ferroelastic properties in stacked templates where they are juxtaposed to ferromagnetic materials. Doing so would allow the control of magnetic properties with electric field, which is novel. Such templates taking advantage two or more properties acquired a new name and now goes by multiferroics. After a brief historical development, this article discusses technological issues such as growth and processing, electrical and optical properties, piezo, pyro, and ferroelectric properties, degradation, measurements methods, and application of mainly lead-zirconate-titanate (PZT = PbZr1−xTixO3). The focus on PZT stems from its large electromechanical constant, large saturation polarization and large dielectric constant.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
a Department of Electrical and Computer Engineering and Department of Physics , Virginia Commonwealth University , Richmond, VA, 23284-3068, USA
b Department of Physics and Applied Physics , Kyung Hee University , Kyung-Ki-Do, 5 Yong-In, 449-701, S. Korea
c Samsung Advanced Institute of Technology (SAIT) , 14 Nong-Seo Ri, Youn-In City, Gyung-Gee Do, Republic of Korea
References (100+)
Show source-provided references
1. Cady W. G. · 1964
2. Jaffe , B. Cook , W. R. Jr. and Jaffe , H. 1971.Piezoelectric Ceramics, 131London: Academic Press.10.1016/B978-0-12-379550-2.50015-6 ↗
3. 10.1109/23.21140110.1109/23.211401 ↗
4. 10.1063/1.34441910.1063/1.344419 ↗
5. 10.1063/1.131677410.1063/1.1316774 ↗
6. 10.1063/1.36933810.1063/1.369338 ↗
7. 10.1063/1.11032410.1063/1.110324 ↗
8. 10.1126/science.246.4936.140010.1126/science.246.4936.1400 ↗
9. 10.1146/annurev.matsci.30.1.26310.1146/annurev.matsci.30.1.263 ↗
10. 10.1111/j.1151-2916.1999.tb01840.x10.1111/j.1151-2916.1999.tb01840.x ↗
11. Ishwara H. · FED (Future Electron Devices) J. · 2000 · 11 · 27
12. 10.1016/j.mseb.2005.02.04710.1016/j.mseb.2005.02.047 ↗
13. 10.1103/RevModPhys.77.108310.1103/RevModPhys.77.1083 ↗
14. 10.1103/PhysRev.17.47510.1103/PhysRev.17.475 ↗
15. Kurchatov I. V. · 1933
16. 10.1007/BF0149815210.1007/BF01498152 ↗
17. Wul B. · URSS · 1945 · 46 · 139
18. Goldschmidt, V. M. 1927. 1 von Hippel et al., 1089 (1946). Internationale Tabellen zur Bestimmung yon Kristallstructuren, Vol. 2. Berlin: Gebriider Borntraeger, 1935; H. T. Evans Jr. The crystal structure of tetragonal barium titanate,, 377 (1951);
19. H. T. Evans Jr., An X-ray diffraction study of tetragonal barium titanate,, 1019 (1961);10.1107/S0365110X61002989 ↗
20. H. D. Megaw, Refinement of the structure of Ba Ti O3 and other ferroelectrics,, 1962, 15, 97210.1107/S0365110X62002571 ↗
21. Ginsburg V. L. · Zh. Eksp. Teor. Fiz. · 15 · 739
22. Xu Y. · 1991
23. Lines M. E. · 1977
24. Sonin A. S. · 1970
25. Kwak B. S. · Phys. Rev. B · 1994 · 49 · 1486510.1103/PhysRevB.49.14865 ↗
26. Kong L. B. · Mat. Lett. · 2001 · 49 · 9610.1016/S0167-577X(00)00350-5 ↗
27. 10.1063/1.36423910.1063/1.364239 ↗
28. Shirane G. · J. Phys. Soc. Japan · 1952 · 7 · 33310.1143/JPSJ.7.333 ↗
29. 10.1063/1.12375610.1063/1.123756 ↗
30. 10.1103/PhysRevB.63.01410310.1103/PhysRevB.63.014103 ↗
31. 10.1103/PhysRevB.72.10411010.1103/PhysRevB.72.104110 ↗
32. 10.1080/0141159050046726210.1080/01411590500467262 ↗
33. Smolenski G. A. · Fiz. Tverd. Tela · 1960 · 2 · 2906
34. Aurivillius B. · Arkiv Kemi · 1949 · 1 · 499
35. 10.1016/0022-3697(62)90526-710.1016/0022-3697(62)90526-7 ↗
36. 10.1103/PhysRevB.61.1443410.1103/PhysRevB.61.14434 ↗
37. Shiosaki T. · J. Korean Phys. Soc. · 1998 · 32 · S1316
38. 10.1016/j.mseb.2004.12.08710.1016/j.mseb.2004.12.087 ↗
39. 10.1103/PhysRev.122.80410.1103/PhysRev.122.804 ↗
40. Cummings S. E. · J. Appl. Phys. · 1968 · 39 · 226810.1063/1.1656542 ↗
41. 10.1007/s10832-004-5130-y10.1007/s10832-004-5130-y ↗
42. Nashimoto K. · Appl. Phys. Lett. · 1995 · 66 · 82210.1063/1.113433 ↗
43. 10.1063/1.12181610.1063/1.121816 ↗
44. Hu S. H. · Appl. Phys. Lett. · 2004 · 84 · 360910.1063/1.1738178 ↗
45. 10.1063/1.12611210.1063/1.126112 ↗
46. Wang F. · J. Appl. Phys. · 2000 · 88 · 170110.1063/1.373880 ↗
47. Gruverman A. · Appl. Phys. Lett. · 2002 · 84 · 515310.1063/1.1765740 ↗
48. 10.1063/1.36886910.1063/1.368869 ↗
49. 10.1016/j.tsf.2005.06.00710.1016/j.tsf.2005.06.007 ↗
50. 10.1016/S0925-8388(02)01178-710.1016/S0925-8388(02)01178-7 ↗
51. Eom C. B. · Appl. Phys. Lett. · 1993 · 63 · 257010.1063/1.110436 ↗
52. 10.1016/j.mser.2003.12.00210.1016/j.mser.2003.12.002 ↗
53. 10.1016/S0039-6028(02)01825-310.1016/S0039-6028(02)01825-3 ↗
54. Zeisberger M. · Supercond. Sci. Technol. · 2005 · 18 · S20210.1088/0953-2048/18/2/041 ↗
55. Chakraborty A. · Ceram. Int. · 1999 · 125 · 11510.1016/S0272-8842(98)00010-8 ↗
56. Gausepohl S. C. · Phys. Rev. B. · 1995 · 52 · 345910.1103/PhysRevB.52.3459 ↗
57. Wold A. · J. Amer. Chem. Soc. · 1957 · 70 · 491110.1021/ja01575a022 ↗
58. Hwang K. S. · Thin Solid Films · 1999 · 347 · 10610.1016/S0040-6090(98)01727-1 ↗
59. Kao C.-K. · Appl. Phys. Lett. · 2003 · 83 · 391510.1063/1.1625428 ↗
60. 10.1016/j.tsf.2003.12.05710.1016/j.tsf.2003.12.057 ↗
61. 10.1016/0040-6090(95)06822-810.1016/0040-6090(95)06822-8 ↗
62. Jacob M. V. · Physica C · 2002 · 372 · 47410.1016/S0921-4534(02)00725-6 ↗
63. Kim J. W. · Physica C · 2005 · 421 · 1010.1016/j.physc.2005.02.002 ↗
64. Asano H. · Phys. Lett. · 1991 · 58 · 2981
65. Yoshimura T. · Growth · 1997 · 174 · 79010.1016/S0022-0248(97)00061-4 ↗
66. Perry S. S. · Surf. Sci. · 1997 · 383 · 26810.1016/S0039-6028(97)00185-4 ↗
67. 10.1111/j.1151-2916.1993.tb03936.x10.1111/j.1151-2916.1993.tb03936.x ↗
68. Cheung J. T. · Appl. Phys. Lett. · 1992 · 60 · 318010.1063/1.106735 ↗
69. Awaji T. · Jpn. J. Appl. Phys. · 1992 · 31 · L64210.1143/JJAP.31.L642 ↗
70. 10.1063/1.148604810.1063/1.1486048 ↗
71. 10.1063/1.12400610.1063/1.124006 ↗
72. Liu B. T. · Appl. Phys. Lett. · 2002 · 80 · 480110.1063/1.1484552 ↗
73. Hwang K.-S. · Jpn. J. Appl. Phys. · 1997 · 36 · 522110.1143/JJAP.36.5221 ↗
74. 10.1063/1.161125810.1063/1.1611258 ↗
75. 10.1038/nmat105710.1038/nmat1057 ↗
76. Koster G. · Appl. Phys. Lett. · 1998 · 73 · 292010.1063/1.122630 ↗
77. 10.1063/1.10565110.1063/1.105651 ↗
78. 10.1063/1.11119110.1063/1.111191 ↗
79. Wu W. · Appl. Phys. Lett. · 2000 · 77 · 344110.1063/1.1327279 ↗
80. Wu W. · Appl. Phys. Lett. · 2004 · 85 · 501310.1063/1.1827929 ↗
81. 10.1063/1.36590110.1063/1.365901 ↗
82. Wu W. · J. Appl. Phys. · 2000 · 88 · 206810.1063/1.1305859 ↗
83. Zhang S. T. · Microelectron. Eng. · 2003 · 66 · 70110.1016/S0167-9317(02)00987-5 ↗
84. 10.1016/S0921-5107(99)00160-910.1016/S0921-5107(99)00160-9 ↗
85. Guerrero C. · Solid-State Electron. · 2001 · 45 · 143310.1016/S0038-1101(00)00275-6 ↗
86. Ling S. H. · Appl. Phys. Lett. · 1993 · 62 · 175710.1063/1.109598 ↗
87. Madar R. · Growth · 1975 · 31 · 19710.1016/0022-0248(75)90131-1 ↗
88. 10.1007/978-3-642-58562-310.1007/978-3-642-58562-3 ↗
89. 10.1016/S1359-6462(02)00076-310.1016/S1359-6462(02)00076-3 ↗
90. 10.1063/1.36886910.1063/1.368869 ↗
91. Shin D. S. · Thin Solid Films · 1999 · 354 · 25110.1016/S0040-6090(99)00429-0 ↗
92. Talin A. A. · Appl. Phys. Lett. · 2002 · 81 · 106210.1063/1.1498006 ↗
93. 10.1080/71404078210.1080/714040782 ↗
94. 10.1016/S0927-796X(00)00032-210.1016/S0927-796X(00)00032-2 ↗
95. Willems G. J. · Microelectr. Eng. · 1995 · 29 · 21710.1016/0167-9317(95)00149-2 ↗
96. Klissurska R. D. · Microelectr. Eng. · 1995 · 29 · 29710.1016/0167-9317(95)00164-6 ↗
97. Mardare C. C. · Appl. Surf. Sci. · 2005 · 243 · 11310.1016/j.apsusc.2004.09.050 ↗
98. Matsui Y. · Jpn. J. Appl. Phys. · 1998 · 37 · L46510.1143/JJAP.37.L465 ↗
99. Abe N. · Jpn. J. Appl. Phys. · 2003 · 42 · 279110.1143/JJAP.42.2791 ↗
100. Sameshima K. · Jpn. J. Appl. Phys. · 1993 · 32 · 414410.1143/JJAP.32.4144 ↗