The atomic structure of vicinal Si(OO1) and Ge(001)

Abstract Atomic resolution images of the terraces and steps on Si(001) and Ge(001) combined with theoretical modeling of these structures have allowed rapid progress in understanding the (001) vicinal surfaces of both semiconductors. The behavior of steps, however, involves complex and still poorly understood processes affected by tilt angle, surface stress, and the conditions during annealing and deposition. This review describes current knowledge of atomic structures and mechanisms, primarily from an experimental perspective. We describe the steps, stepstep interactions, and non-equilibrium effects during growth, along with the properties of the terraces between the steps. Applicable experimental techniques are briefly described, with emphasis on scanning tunneling microscopy, which has provided the bulk of the latest data.