Effect of SiC Particle Size on the Properties of TiSi₂/SiC Composites Semiconductor Fabricated by Liquid Infiltration of Ti–Si Eutectic Alloy

A novel type of semiconductor TiSi₂/SiC composites is fabricated and joined by liquid infiltration of Ti–Si eutectic alloy, and the effect of SiC particle size on the properties of composites is investigated herein. As the SiC particle size increases from 5 to 10 μm, the electrical conductivity of composites at high temperature is improved. The flexural strength of composite increases from 289.37 ± 5.98 to 302.72 ± 10.72 MPa, while the indentation modulus of composites is enhanced from 422.12 ± 21.13 to 469.12 ± 7.62 GPa. The hardness of composite also increases from 27.71 ± 4.72 to 30.94 ± 4.05 GPa. Significantly, to demonstrate the preparation and concurrent joining, multiple stacked SiC/C porous preforms are concurrently reactively infiltrated and joined by liquid Ti–Si eutectic alloy. The shear strength of TiSi₂/SiC composites joints is measured to be 57.58 ± 2.21 MPa and 69.87 ± 1.92 MPa, with SiC particle size at 5 and 10 μm, respectively. Notably, the diffusion and merging of atoms strengthen the bonds between adjacent particles. Therefore, TiSi₂/SiC composites with 10 μm SiC present better electrical and mechanical properties. These results provide opportunities to designing, fabricating, and joining TiSi₂/SiC composites with specific properties in the semiconductor industry, such as the semiconductor vacuum chucks.