Topography of Defect Parameters on Si and GaAs Wafers

A new measurement technique is presented which is able to analyse defects in semiconductor wafers with pieces of information like DLTS. However, in contrast to DLTS the technique is non‐destructive, contact‐ free and highly spatially resolving. Shallow and deep levels can be investigated in un‐doped or doped semiconductors. In addition, photoconductivity and carrier lifetime topograms of wafers are possible with extremely low injection levels.