Perovskite BaHfO₃ Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications

Very thin layers of dielectric materials are of high importance for many advanced microelectronic applications. In this work, properties of very thin (<50 nm) BaHfO3 layers prepared using molecular beam deposition and chemical vapor deposition are examined. We conclude that polycrystalline cubic BaHfO3 films appear to be promising candidates for future memory capacitor applications.