Recent Advances of 2D MXene in Field‐Effect Transistors

As semiconductor technology advances into the post‐Moore era, the exploration of novel materials for next‐generation electronic devices has become imperative. MXenes, an emerging class of two‐dimensional transition metal carbides/nitrides, exhibit exceptional electrical properties that make them highly promising for field‐effect transistor (FET) applications. Metallic MXenes demonstrate superior conductivity and low contact resistance, positioning them as ideal candidates for source, drain, and gate electrodes. Conversely, semiconducting compositions provide tunable bandgap and high carrier mobility, serve as efficient channel materials, critically influencing FET performance. MXene‐based FETs have demonstrated remarkable versatility, particularly in chemical sensing, enabled by their high surface sensitivity, and photodetection, leveraging their outstanding optoelectronic characteristics. This review systematically examines the fundamental properties of MXenes that govern FET performance, including interfacial engineering, charge transport mechanisms, and band structure modulation. Furthermore, we highlight key applications of MXene‐based FETs in sensing and optoelectronics, discussing recent advancements and future prospects. By consolidating these insights, this work aims to provide a foundational reference for researchers engaged in the design and optimization of next‐generation MXene‐based FET technologies.