Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors

Herein, a simple and effective technique, “multidipping technique,” is implemented to rapidly form random networks of single‐walled carbon nanotubes (SWCNTs) used as a channel material in solution‐processed thin‐film transistors (TFTs). The multidipping process consists of repetition of dipping a substrate into a dispersed semiconducting SWCNT solution and rinsing the substrate between each dipping process. Compared with the conventional dipping method, this technique reduces total deposition time required to form high‐quality SWCNT networks by more than half and simultaneously improves the electrical performances of SWCNT TFTs. These phenomena are also comprehensively analyzed with experiments and microscopic images of the channel region, which well show morphology of the SWCNT networks. It is believed that the low‐temperature process and facile deposition method of SWCNT networks can provide a guideline for high‐throughput fabrication of high‐performance SWCNT TFT arrays in flexible active matrix sensor array and display applications.