journal article·2017-08Open access

Advanced Raman Spectroscopy Using Nanofocusing of Light

Thomas Nuytten, Janusz Bogdanowicz, Thomas Hantschel, Andreas Schulze, Paola Favia, Hugo Bender, Ingrid De Wolf, Wilfried Vandervorst

Advanced Engineering Materials· Volume 19· Issue 8

Abstract

Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction‐limited, impeding its application potential in nanostructured devices. Under correct polarization conditions, the Raman response from a periodic array of fins is dramatically enhanced inside the semiconductor material, re‐enabling fast and non‐destructive optical characterization of deep‐subwavelength semiconductor patterns. In this paper, it is shown that the effect is not limited to the material system where it was first observed, and results of nanofocused Raman spectroscopy in a variety of semiconductor materials are presented. The authors illustrate and discuss how the universality of the enhancement creates a unique potential for non‐invasive and rapid stress and composition measurements at the nanoscale.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

imec, Kapeldreef 75 B‐3001 Leuven Belgium

Dept. of Materials Engineering KU Leuven B‐3001 Leuven Belgium

Instituut voor Kern‐ en Stralingsfysica KU Leuven B‐3001 Leuven Belgium

References (33)

Show source-provided references
1. 10.1088/0268-1242/11/2/00110.1088/0268-1242/11/2/001 ↗
2. 10.1016/0038-1098(70)90588-010.1016/0038-1098(70)90588-0 ↗
3. J. Mitard L. Witters H. Arimura Y. Sasaki A. P. Milenin R. Loo A. Hikavyy G. Eneman P. Lagrain H. Mertens S. Sioncke C. Vrancken H. Bender K. Barla N. Horiguchi A. Mocuta N. Collaert A. V.‐Y. Thean 2014 EEE Inc Piscataway NJ 16.5.110.1109/IEDM.2014.7047065 ↗
4. 10.1149/06406.0841ecst10.1149/06406.0841ecst ↗
5. 10.1002/jrs.447810.1002/jrs.4478 ↗
6. 10.1088/0957-4484/24/18/18570410.1088/0957-4484/24/18/185704 ↗
7. 10.1103/PhysRevB.88.11530910.1103/PhysRevB.88.115309 ↗
8. 10.1016/j.ultramic.2011.08.00910.1016/j.ultramic.2011.08.009 ↗
9. M. Kuhn Y. Zhou Z. Ma 2013 NIST Gaithersburg MD
10. 10.1063/1.311096410.1063/1.3110964 ↗
11. 10.1063/1.490653710.1063/1.4906537 ↗
12. 10.1063/1.494260310.1063/1.4942603 ↗
13. 10.1016/j.mee.2014.08.00510.1016/j.mee.2014.08.005 ↗
14. 10.1016/j.sse.2015.09.02010.1016/j.sse.2015.09.020 ↗
15. W. Guo Y. Mols R. Langer K. Barla M. Caymax B. Kunert L. Date X. Bao D. Carlson E. Sanchez 2015 E‐MRS France
16. 10.1063/1.489246810.1063/1.4892468 ↗
17. 10.1103/PhysRevB.50.1714310.1103/PhysRevB.50.17143 ↗
18. 10.1103/PhysRevB.65.03521010.1103/PhysRevB.65.035210 ↗
19. 10.1063/1.32815810.1063/1.328158 ↗
20. 10.1016/j.jcrysgro.2014.01.01910.1016/j.jcrysgro.2014.01.019 ↗
21. J. Mitard L. Witters R. Loo S. H. Lee J. W. Sun J. Franco L.‐Å. Ragnarsson A. Brand X. Lu N. Yoshida G. Eneman D. P. Brunco M. Vorderwestner P. Storck A. P. Milenin A. Hikavyy N. Waldron P. Favia D. Vanhaeren A. Vanderheyden R. Olivier H. Mertens H. Arimura S. Sonja C. Vrancken H. Bender P. Eyben K. Barla S‐G Lee N. Horiguchi N. Collaert A. V.‐Y. Thean 2014 Widerkehr and Associates Montgomery Village MD 138
22. 10.1016/0038-1098(73)90692-310.1016/0038-1098(73)90692-3 ↗
23. 10.1063/1.288452610.1063/1.2884526 ↗
24. 10.1088/0957-4484/24/18/18570410.1088/0957-4484/24/18/185704 ↗
25. 10.1063/1.35655410.1063/1.356554 ↗
26. 10.1103/PhysRevB.73.07532210.1103/PhysRevB.73.075322 ↗
27. 10.1103/PhysRevB.83.08130210.1103/PhysRevB.83.081302 ↗
28. 10.1016/j.apsusc.2016.01.05610.1016/j.apsusc.2016.01.056 ↗
29. 10.1063/1.492713310.1063/1.4927133 ↗
30. 10.1063/1.166193510.1063/1.1661935 ↗
31. 10.1103/PhysRevB.41.752910.1103/PhysRevB.41.7529 ↗
32. 10.1103/PhysRevB.91.07531210.1103/PhysRevB.91.075312 ↗
33. 10.7567/JJAP.51.02BA0310.7567/JJAP.51.02BA03 ↗