journal article·2011-10

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La2Ti2O7 Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO3 Substrates

Zhenmian Shao, Sébastien Saitzek, Pascal Roussel, Anthony Ferri, Émilie Bruyer, Adlane Sayede, Mohamed Rguiti, Olivier Mentré, Rachel Desfeux

Advanced Engineering Materials· Volume 13· Issue 10
Publisher page

Abstract

Abstract (00l)‐Oriented La2Ti2O7 (LTO) thin films with monoclinic perovskite‐layer structure [a = 7.806(2) Å, b = 5.552(3) Å, c = 13.015(5) Å, β = 98.62(2)°] have been grown by a sol–gel route on conducting (110)‐oriented doped Nb:SrTiO3 (STO) substrates. The narrow rocking curves (0.24° width for 004LTO peak) demonstrate the sharp mosaïcity of the films. Using high‐resolution X‐ray diffraction (HR‐XRD), epitaxial relationships between the LTO, and the STO substrate are given. In addition, HR‐XRD evidences the existence of (212)‐oriented crystallites 1.5° disoriented with respect to the plane of the substrate. We confirm, by DFT calculations, that the polarization vector lies in the b‐axis of the LTO cell and consequently, the existence of these (212)‐oriented crystallites enables to explain the origin of the various contrasts observed both on the in‐plane and out‐of‐plane images when collected by piezoresponse force microscopy. Finally, both successful poling experiments performed via the tip of atomic force microscope and the existence of local piezoloops within the domains, unambiguously confirm the ferroelectric state of the films at the nanoscale level. Once again, this study demonstrates that a clear understanding of nanoscale piezoelectric/ferroelectric phenomena in oriented thin films passes through a carefully structural analysis as performed by HR‐XRD.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (54)

Show source-provided references
1. 10.1126/science.109250810.1126/science.1092508 ↗
2. 10.1016/j.actamat.2008.02.00610.1016/j.actamat.2008.02.006 ↗
3. 10.1016/j.sna.2006.03.03610.1016/j.sna.2006.03.036 ↗
4. 10.1016/j.jeurceramsoc.2005.03.19610.1016/j.jeurceramsoc.2005.03.196 ↗
5. Yoon J. G. · 2002 · 309
6. 10.1016/j.pcrysgrow.2006.06.00110.1016/j.pcrysgrow.2006.06.001 ↗
7. 10.1016/j.mseb.2006.09.03110.1016/j.mseb.2006.09.031 ↗
8. 10.1016/S0955-2219(00)00304-610.1016/S0955-2219(00)00304-6 ↗
9. 10.1016/j.jallcom.2006.02.09010.1016/j.jallcom.2006.02.090 ↗
10. 10.1016/S0022-3697(03)00263-410.1016/S0022-3697(03)00263-4 ↗
11. 10.1016/S0042-207X(02)00166-510.1016/S0042-207X(02)00166-5 ↗
12. 10.1016/0022-0248(72)90541-610.1016/0022-0248(72)90541-6 ↗
13. 10.1143/JJAP.13.147310.1143/JJAP.13.1473 ↗
14. 10.1038/nature0302810.1038/nature03028 ↗
15. 10.1080/0015019740823414310.1080/00150197408234143 ↗
16. Sayir A. · Ceram. Trans. · 2006 · 179 · 5710.1002/9781118407899.ch6 ↗
17. 10.1016/0167-577X(91)90215-R10.1016/0167-577X(91)90215-R ↗
18. Wakino K. · J. Am. Soc. · 1984 · 67 · 278
19. 10.1107/S056774087500700510.1107/S0567740875007005 ↗
20. 10.1107/S056774088200299410.1107/S0567740882002994 ↗
21. 10.1107/S010876819200987X10.1107/S010876819200987X ↗
22. 10.1016/j.apsusc.2006.10.01610.1016/j.apsusc.2006.10.016 ↗
23. 10.2109/jcersj.113.6710.2109/jcersj.113.67 ↗
24. Y. J.Song Ferroelectric Thin Films for high Density Non‐Volatile Memories Ph. D. Thesis Virgina Polytechnic Institute and State University Blacksburg1998.
25. 10.1016/j.jcrysgro.2007.12.00610.1016/j.jcrysgro.2007.12.006 ↗
26. 10.1063/1.148176710.1063/1.1481767 ↗
27. 10.1016/j.molcata.2006.06.05610.1016/j.molcata.2006.06.056 ↗
28. 10.1016/S0040-6090(02)00837-410.1016/S0040-6090(02)00837-4 ↗
29. 10.1557/JMR.2003.004610.1557/JMR.2003.0046 ↗
30. 10.1557/JMR.1992.285910.1557/JMR.1992.2859 ↗
31. 10.1016/j.jcrysgro.2009.06.05110.1016/j.jcrysgro.2009.06.051 ↗
32. 10.1080/0015019080199742710.1080/00150190801997427 ↗
33. 10.1103/PhysRevB.65.12540810.1103/PhysRevB.65.125408 ↗
34. 10.1063/1.156517710.1063/1.1565177 ↗
35. 10.1063/1.212680410.1063/1.2126804 ↗
36. 10.1016/j.susc.2005.09.05310.1016/j.susc.2005.09.053 ↗
37. 10.1007/s10853-005-5946-010.1007/s10853-005-5946-0 ↗
38. 10.1080/1058458070132012310.1080/10584580701320123 ↗
39. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
40. 10.1103/PhysRevB.49.1425110.1103/PhysRevB.49.14251 ↗
41. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
42. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
43. 10.1103/PhysRevB.45.1324410.1103/PhysRevB.45.13244 ↗
44. 10.1103/PhysRevB.47.165110.1103/PhysRevB.47.1651 ↗
45. 10.1103/PhysRevB.48.444210.1103/PhysRevB.48.4442 ↗
46. 10.1103/RevModPhys.66.89910.1103/RevModPhys.66.899 ↗
47. Jeon S. · J. Korean Phys. Soc. · 1998 · 32 · S1657
48. 10.1016/j.actamat.2004.11.02010.1016/j.actamat.2004.11.020 ↗
49. 10.1016/j.mee.2007.12.03610.1016/j.mee.2007.12.036 ↗
50. 10.1063/1.136664410.1063/1.1366644 ↗
51. 10.1063/1.149769810.1063/1.1497698 ↗
52. 10.1016/j.susc.2008.04.00110.1016/j.susc.2008.04.001 ↗
53. Guinebretière R. · 2006
54. 10.1016/S0040-6090(03)00030-010.1016/S0040-6090(03)00030-0 ↗