journal article·2025-04

Enabling Optoelectronics in Harsh Environments: Laser‐Printed Perovskite Films with Exceptional Stability Under Extreme Radiation, Thermal Stress, and Humidity

Hurriyet Yuce‐Cakir, Derek Dremann, Jarlem L. Morel, Sharmistha Khan, Marielle Deconinck, Vladimir V. Shilovskikh, Wanyi Nie, Yana Vaynzof, Oana D. Jurchescu

Advanced Energy Materials· Volume 15· Issue 16
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Abstract

Abstract Perovskite optoelectronics are regarded as a disruptive technology, but their susceptibility to environmental degradation and reliance on toxic solvents in traditional processing methods pose significant challenges to their practical implementation. Herein, methylammonium lead iodide (MAPbI3) perovskite films processed via a solvent‐free laser printing technique, that exhibit exceptional stability, are reported. These films withstand extreme conditions, including high doses of X‐ray radiation exceeding 200 Gy, blue laser illumination, 90% relative humidity, and thermal stress up to 80 °C for over 300 min in air. We demonstrate that laser‐printed films maintain their structural integrity and optoelectronic properties even after prolonged exposure to these stressors, significantly surpassing the stability of conventionally processed films. The enhanced stability is attributed to the unique film formation mechanism and resulting defect‐tolerant microstructure. These results underscore the potential of laser printing as a scalable, safe, and sustainable manufacturing route for producing stable perovskite‐based devices with potential applications in diverse fields, ranging from renewable energy to large‐area electronics and space exploration.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Optical properties and cooling technologies in crystalline materials · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Deparment of Physics and Center for Functional Materials Wake Forest University Winston‐Salem NC 27109 USA

Department of Physics SUNY University at Buffalo Buffalo NY 14220 USA

Chair for Emerging Electronic Technologies Technical University of Dresden Nöthnitzer Str. 61 01187 Dresden Germany

Leibniz‐Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany

Funding

National Science Foundation · Deutsche Forschungsgemeinschaft · European Research Council · University at Buffalo · Research Foundation for The State University of New York

References (96)

Show source-provided references
1. 10.1039/C7TA00404D10.1039/C7TA00404D ↗
2. 10.1016/j.mtcomm.2022.10518810.1016/j.mtcomm.2022.105188 ↗
3. 10.1002/adfm.20191000410.1002/adfm.201910004 ↗
4. 10.1126/science.122860410.1126/science.1228604 ↗
5. 10.1126/science.aaa576010.1126/science.aaa5760 ↗
6. 10.1038/s41467-022-28263-210.1038/s41467-022-28263-2 ↗
7. 10.1038/s41467-021-21934-610.1038/s41467-021-21934-6 ↗
8. 10.1063/5.004761610.1063/5.0047616 ↗
9. 10.1126/science.add733110.1126/science.add7331 ↗
10. 10.1038/s41560-023-01406-510.1038/s41560-023-01406-5 ↗
11. 10.1038/s41560-022-01154-y10.1038/s41560-022-01154-y ↗
12. 10.1038/s41563-020-0784-710.1038/s41563-020-0784-7 ↗
13. 10.1002/adma.20230228310.1002/adma.202302283 ↗
14. 10.1002/advs.20220553610.1002/advs.202205536 ↗
15. 10.1002/adom.20230084710.1002/adom.202300847 ↗
16. 10.1088/2399-1984/ad36ff10.1088/2399-1984/ad36ff ↗
17. 10.1021/acsami.0c2199210.1021/acsami.0c21992 ↗
18. 10.1002/adfm.20210102910.1002/adfm.202101029 ↗
19. 10.1126/sciadv.abf336210.1126/sciadv.abf3362 ↗
20. 10.1002/adfm.20221184110.1002/adfm.202211841 ↗
21. 10.1038/s41467-023-37505-w10.1038/s41467-023-37505-w ↗
22. 10.1557/mrc.2015.2110.1557/mrc.2015.21 ↗
23. 10.1088/2515-7639/acc89310.1088/2515-7639/acc893 ↗
24. 10.1039/D1EE00157D10.1039/D1EE00157D ↗
25. 10.1038/s41578-023-00582-w10.1038/s41578-023-00582-w ↗
26. 10.1002/adma.20200654510.1002/adma.202006545 ↗
27. 10.1016/j.jhazmat.2021.12784810.1016/j.jhazmat.2021.127848 ↗
28. 10.1021/acsami.0c1726910.1021/acsami.0c17269 ↗
29. 10.1039/D1TC02315B10.1039/D1TC02315B ↗
30. 10.1016/j.jpowsour.2023.23264510.1016/j.jpowsour.2023.232645 ↗
31. 10.1038/s41566-019-0572-610.1038/s41566-019-0572-6 ↗
32. 10.1039/D1EE02882K10.1039/D1EE02882K ↗
33. 10.1002/adom.20190151610.1002/adom.201901516 ↗
34. 10.1002/advs.20170033110.1002/advs.201700331 ↗
35. 10.1021/acsami.1c1415210.1021/acsami.1c14152 ↗
36. 10.1002/aenm.20210323610.1002/aenm.202103236 ↗
37. 10.1038/s41893-021-00789-110.1038/s41893-021-00789-1 ↗
38. 10.1002/aesr.20200004710.1002/aesr.202000047 ↗
39. 10.1016/j.cej.2021.13147510.1016/j.cej.2021.131475 ↗
40. 10.1021/acsami.2c0203610.1021/acsami.2c02036 ↗
41. 10.1088/2515-7639/ab9aac10.1088/2515-7639/ab9aac ↗
42. 10.1021/acs.chemmater.9b0126510.1021/acs.chemmater.9b01265 ↗
43. 10.1002/aenm.20200307310.1002/aenm.202003073 ↗
44. 10.1002/admt.20170016710.1002/admt.201700167 ↗
45. 10.1021/acsami.9b0916010.1021/acsami.9b09160 ↗
46. 10.1088/2515-7639/ab9aac10.1088/2515-7639/ab9aac ↗
47. 10.1021/acs.jpcc.9b0237110.1021/acs.jpcc.9b02371 ↗
48. 10.7326/0003-4819-140-12-200406150-0001510.7326/0003-4819-140-12-200406150-00015 ↗
49. 10.1038/s41467-024-44876-110.1038/s41467-024-44876-1 ↗
50. 10.1039/D1CP01443A10.1039/D1CP01443A ↗
51. 10.1039/D3CP05061K10.1039/D3CP05061K ↗
52. 10.1039/C8EE01136B10.1039/C8EE01136B ↗
53. 10.1002/admt.20170016710.1002/admt.201700167 ↗
54. Wang Q. · Appl. Phys. Lett. · 2014 · 105
55. 10.1021/acs.jpclett.2c0194010.1021/acs.jpclett.2c01940 ↗
56. 10.1002/solr.20210099910.1002/solr.202100999 ↗
57. 10.1021/acsaelm.3c0014910.1021/acsaelm.3c00149 ↗
58. 10.1002/aelm.20180031610.1002/aelm.201800316 ↗
59. 10.3390/app901018810.3390/app9010188 ↗
60. 10.1021/acs.chemmater.5b0388310.1021/acs.chemmater.5b03883 ↗
61. 10.1002/cphc.20190039310.1002/cphc.201900393 ↗
62. 10.1021/acs.jpcc.5b1146510.1021/acs.jpcc.5b11465 ↗
63. 10.1021/acsnano.8b0573110.1021/acsnano.8b05731 ↗
64. 10.1002/cssc.20160099910.1002/cssc.201600999 ↗
65. 10.1016/j.mtchem.2022.10128410.1016/j.mtchem.2022.101284 ↗
66. 10.1021/acsenergylett.0c0196410.1021/acsenergylett.0c01964 ↗
67. 10.1021/acsami.9b0775110.1021/acsami.9b07751 ↗
68. 10.1002/adma.20170246910.1002/adma.201702469 ↗
69. 10.1021/acsaem.0c0063810.1021/acsaem.0c00638 ↗
70. 10.1038/ncomms1157410.1038/ncomms11574 ↗
71. 10.1002/adma.20230554910.1002/adma.202305549 ↗
72. 10.1038/ncomms1168310.1038/ncomms11683 ↗
73. Huang P. C. · Langmuir · 2023 · 40 · 23
74. 10.1002/aesr.20210021810.1002/aesr.202100218 ↗
75. 10.1039/C7RA01155E10.1039/C7RA01155E ↗
76. 10.1016/j.ijleo.2022.16958610.1016/j.ijleo.2022.169586 ↗
77. 10.1002/adfm.20160251910.1002/adfm.201602519 ↗
78. 10.1021/acsphotonics.7b0079710.1021/acsphotonics.7b00797 ↗
79. 10.1021/acsaem.2c0412010.1021/acsaem.2c04120 ↗
80. 10.1002/solr.20160000110.1002/solr.201600001 ↗
81. 10.3390/app802030810.3390/app8020308 ↗
82. 10.1063/1.489159510.1063/1.4891595 ↗
83. 10.1002/advs.20220037910.1002/advs.202200379 ↗
84. 10.1002/aenm.20200232610.1002/aenm.202002326 ↗
85. 10.1039/C7EE00358G10.1039/C7EE00358G ↗
86. 10.1038/ncomms1515210.1038/ncomms15152 ↗
87. 10.1021/acs.accounts.5b0046910.1021/acs.accounts.5b00469 ↗
88. 10.1039/D0RA00605J10.1039/D0RA00605J ↗
89. 10.1039/C8EE01136B10.1039/C8EE01136B ↗
90. 10.1039/C8TC05998E10.1039/C8TC05998E ↗
91. 10.1063/1.496784010.1063/1.4967840 ↗
92. 10.1002/ange.20150315310.1002/ange.201503153 ↗
93. 10.1002/aenm.20170097710.1002/aenm.201700977 ↗
94. 10.1021/acs.jpclett.8b0259510.1021/acs.jpclett.8b02595 ↗
95. 10.1021/acs.jpclett.4c0098510.1021/acs.jpclett.4c00985 ↗
96. 10.1021/acsenergylett.4c0069110.1021/acsenergylett.4c00691 ↗