Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices
Source abstract
Abstract
Unique p-type CdS nanowires with ultrahigh mobility for photovoltaic devices: p-type CdS nanowires can be prepared by surface charge transfer doping with a thin MoO3 layer, which shows excellent rectifying characteristics with a high on/off current ratio of ∼1.6 × 102 and a low forward turn-on voltage of about 1.0 V at room temperature, and obvious photovoltaic behavior with a power conversion efficiency (η) up to 1.65%.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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