Source abstract
Abstract
Deliberate halide exchange between unstable intermediate HPbI2Br and nonstoichiometric FAI is employed to produce high-quality FAPbI3–xBrx (x ≈ 0.44), which eliminates the use of antisolvent dripping and other post-treatment techniques. The obtained perovskite thin film demonstrates high crystallinity and a large and compact crystal domain up to 2–3 µm. The corresponding device shows power conversion efficiency of up to around 19.0%, with reliable stability and reproducibility. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering Chinese University of Hong Kong Shatin New Territories Hong Kong
College of Materials Science and Engineering Shenzhen University Shenzhen 518060 P. R. China
Shenzhen Institute of Advanced Technology Chinese Academy of Science Shenzhen 518055 P. R. China
Instrumental Analysis and Research Center Sun Yat‐sen University Guangzhou 510275 P. R. China
Department of Physics Hong Kong University of Science & Technology Clear Water Bay Kowloon Hong Kong
Funding
Research Grants Council, University Grants Committee
References (27)
Show source-provided references
13. Green M. A. · Prog. Photovolt. Res. Appl. · 2016 · 24