Interface Engineering of Perovskite Transistors with Self-Assembled Monolayers

Due to their exceptional charge transport properties, defect tolerance, and solution-processing advantages, metal halide perovskites have become versatile semiconductor materials for optoelectronic applications. As channel materials for field-effect transistors (FETs), perovskites not only achieve high carrier mobility and are compatible with complementary circuit architectures, but their inherent ionic migration and photoresponsive properties also endow devices with memory and photoresponsive functions, rendering them uniquely attractive for neuromorphic computing (enabling low-power operation). However, defects at the dielectric/channel and channel/electrode interfaces still severely limit device performance and reliability. Recently, self-assembled monolayers (SAMs) have garnered widespread attention as an effective interface modification strategy. Through molecular design and tunable ion-dipole interactions, SAMs can effectively modulate interfacial energy states, suppress defects, and enhance device stability. Herein, a systematic review of the latest advancements in SAMs for perovskite transistors is presented, focusing on their roles in various device architectures and summarizing the structure-function-performance relationships between molecular properties and transistor behavior. Finally, the potential of SAM engineering in achieving robust and controllable interfacial properties is discussed, with the aim of advancing the multifunctional applications of perovskite FETs.