Does Mobility Influence Contact Resistance in Field‐Effect Transistors?
Source abstract
Abstract
The extraction and reporting of reliable device parameters are of paramount importance in semiconductor research. However, the interplay between specific physical and material properties often complicates the analysis of experimental data. This study examines the fundamental relationship between charge‐carrier mobility and contact resistance in field‐effect transistors. Through systematic drift–diffusion simulations and the characterization of precision‐fabricated samples, it is demonstrated that contact resistance scales inversely with intrinsic carrier mobility across a wide parameter range. Crucially, these results indicate that mobility can serve as the primary determinant of contact resistance, even when the charge‐injection barrier at the source electrode remains fixed.
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Research context
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical Engineering and Computer Science University of Ottawa Ottawa Ontario Canada
Department of Materials Science and Engineering National Cheng Kung University Tainan Taiwan
Department of AI Semiconductor Engineering Korea University Sejong Republic of Korea
Funding
Natural Sciences and Engineering Research Council of Canada · University of Ottawa · Korea University · Canada Foundation for Innovation
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Show source-provided references
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