DataVXJournal of Materials Chemistry CPaper
journal article·2026

ALD grown (001) κ-Ga2O3 epitaxial thin films on c-plane sapphire: Influence of thickness and thermal annealing

Andy Séguret, Ilyass Jellal, Hervé Roussel, Isabelle Gélard, Sonia Ortega Murillo, Laetitia Rapenne, Eirini Sarigiannidou, Fabrice Wilhelm, Andrei Rogalev, Marty Volant, Hanako Okuno, Eva Monroy, Vincent Consonni

Journal of Materials Chemistry C
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Abstract

Atomic layer epitaxy of high quality κ-Ga2O3 thin films on c-plane sapphire using atomic layer deposition (ALD) opens perspectives for optoelectronics and power electronics. However, the effects of increasing the...
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Source: crossref · Quality: short

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Electronic materialsMaterials processing

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