Raman and scanning spreading resistance mapping of the evolution of structural phases near the insulator–metal transition in VO2 films

1. Oxides which show a metal-to-insulator transition at the neel temperature10.1103/PhysRevLett.3.34 ↗

2. Phase transition analysis of thermochromic VO 2 thin films by temperature-dependent Raman scattering and ellipsometry10.1016/j.apsusc.2018.06.125 ↗

3. Role of buffer layers on the strain-induced insulator-metal transition of VO2 thin films: a review10.1080/10408436.2024.2400346 ↗

4. Ultrafast X-ray imaging of the light-induced phase transition in VO2

5. Nature of the photoinduced metallic state in monoclinic VO210.1103/PhysRevB.109.L201101 ↗

6. Electrical and structural properties of VO2 in an electric field10.1016/j.cap.2021.05.010 ↗

7. Multi-level operation in VO2-based resistive switching devices10.1063/5.0077160 ↗

8. Two-step current-temperature-induced electrical and optical modifications in VO2 films around the metal-insulator transition10.1063/5.0052954 ↗

9. Vanadium oxide: Phase diagrams, structures, synthesis, and applications10.1021/acs.chemrev.2c00546 ↗

10. Ultrafast structural dynamics of VO210.1103/PhysRevB.96.075128 ↗

11. Electrically tunable VO2–metal metasurface for mid-infrared switching, limiting and nonlinear isolation10.1038/s41566-023-01324-8 ↗

12. Strategies for enhanced optical performance and durability of VO2‐based thermochromic windows10.1002/adem.202470032 ↗

13. Unraveling the Mott-Peierls intrigue in vanadium dioxide10.1103/PhysRevResearch.2.013298 ↗

14. The two components of the crystallographic transition in VO210.1016/0022-4596(71)90091-0 ↗

15. The metal-nonmetal transition, reports10.1088/0034-4885/33/3/302 ↗

16. Deposition-temperature-mediated selective phase transition mechanism of VO2Films10.1021/acs.jpcc.0c03038 ↗

17. Directly measuring the structural transition pathways of strain-engineered VO2thin films10.1039/D0NR04776G ↗

18. Variation of the metal-insulator phase transition temperature in VO2: An overview of some possible implementation methods10.15407/spqeo27.02.136 ↗

19. The phase transition in VO2 probed using x-ray, visible and infrared radiations10.1063/1.4939746 ↗

20. J. del Valle, C.W. Rischau, A. Korshunov, D. Ambrosi, A.T. Martin-Luengo, I. Yousef, S.A. Lopez-Paz, S. Neyshtadt-Ronel, S. Gariglio, A. Bosak, S. Francoual, Y. Kalcheim, A structural instability drives the VO2 metal-insulator transition, (2025). http://arxiv.org/abs/2501.15037.

21. A review of the preparation, properties and applications of VO2 thin films with the reversible phase transition10.3389/fmats.2024.1341518 ↗

22. Non-thermal resistive switching in Mott insulator nanowires10.1038/s41467-020-16752-1 ↗

23. M.M. Qazilbash, M. Brehm, B.G. Chae, P.C. Ho, G.O. Andreev, B.J. Kim, S.J. Yun, A. V. Balatsky, M.B. Maple, F. Keilmann, H.T. Kim, D.N. Basov, Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging, Science. 318 (2007) 1750–1753. Doi: 10.1126/science.1150124 (80-.).10.1126/science.1150124 ↗

24. Tuning metal-insulator transition by one dimensional alignment of giant electronic domains in artificially size-controlled epitaxial VO2 wires10.1063/1.4773371 ↗

25. Nanoscale thermal imaging of VO2via Poole-Frenkel conduction10.1063/5.0086932 ↗

26. Raman submicron spatial mapping of individual Mn-doped ZnO nanorods10.1186/s11671-017-2127-4 ↗

27. Temperature-dependent Raman and ultraviolet photoelectron spectroscopy studies on phase transition behavior of VO2 films with M1 and M2 phases10.1063/1.4870868 ↗

28. Raman fingerprints of different vanadium oxides as impurity phases in VO2 films10.1016/j.optmat.2024.114894 ↗

29. Effect of structural disorder on the modification of V–V and V–O bond lengths at the metal-dielectric phase transition in VO2 thin films10.1016/j.mssp.2024.108224 ↗

30. Effect of structural distortion on the metal-insulator transition in Ar+-implanted VO2 thin films10.1016/j.tsf.2025.140643 ↗

31. Structural mapping of single-crystal VO2 microrods through metal-to-insulator phase transition10.1007/s10853-020-05297-9 ↗

32. Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition10.15407/spqeo26.04.388 ↗

33. P. Eyben, W. Vandervorst, D. Alvarez, M. Xu, M. Fouchier, Probing semiconductor technology and devices with scanning spreading resistance microscopy, in: Scanning Probe Microsc., Springer New York, New York, NY, 2007: pp. 31–87. Doi: 10.1007/978-0-387-28668-6_3.10.1007/978-0-387-28668-6_3 ↗

34. Polarized Raman mapping and phase-transition by CW excitation for fast purely optical characterization of VO2 thin films10.1038/s41598-024-70301-0 ↗

35. Confocal Raman Microscopy across the metal−insulator transition of single vanadium dioxide nanoparticles10.1021/nl8031839 ↗

36. In situ Raman-scattering mapping and resistance study of the VO2 metal-insulator phase transition10.1016/j.tsf.2022.139297 ↗

37. Nanoscale mapping of temperature-dependent conduction in an epitaxial VO2 film grown on an Al2O3 substrate10.1039/D2RA02803D ↗

38. Nanoelectrical monitoring the nonvolatile behavior of VO2 under multi-field stimulate by conductive atomic force microscopy10.1016/j.matlet.2024.136236 ↗

39. Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies10.1038/s41467-018-05998-5 ↗

40. Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO2 thin films

41. Raman scattering by silicon and germanium10.1103/PhysRev.155.712 ↗

42. Raman scattering in VO210.1016/S0921-4526(02)00584-7 ↗

43. Polarized Raman scattering of large crystalline domains in VO2 films on sapphire10.1016/j.vibspec.2015.08.003 ↗

44. Vanadium oxide nanowire phase and orientation analyzed by Raman spectroscopy10.1063/1.3075763 ↗

45. Terahertz transmission characteristics across the phase transition in VO 2 films deposited on Si, sapphire, and SiO 2 substrates10.1063/1.4746701 ↗

46. Raman microscopy analysis of phase transformation mechanisms in vanadium dioxide10.1063/1.1496506 ↗

47. Polymorphism of VO2 thin film: M1, T, and M2 single phase synthesis using pulsed laser deposition

48. The extremely narrow hysteresis width of phase transition in nanocrystalline VO 2 thin films with the flake grain structures10.1016/j.apsusc.2012.07.098 ↗

49. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films10.1103/PhysRevB.93.184106 ↗

50. Metastability in the insulator–metal transition for individual vanadium dioxide nanoparticles10.1021/acs.jpcc.3c02151 ↗

51. Low hysteresis vanadium dioxide integrated on silicon using complementary metal-oxide semiconductor compatible oxide buffer layer10.1002/smsc.202400398 ↗

52. Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram10.1021/nl101457k ↗

53. Nanoscale mapping of temperature-dependent conduction in an epitaxial VO2 film grown on an Al2O3 substrate10.1039/D2RA02803D ↗

54. Physical origin of negative differential resistance in V3O5 and its application as a solid-state oscillator10.1002/adma.202208477 ↗

55. Nanoscale mapping of temperature-dependent conduction in an epitaxial VO 2 film grown on an Al 2 O 3 substrate10.1039/D2RA02803D ↗

56. Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

57. VO2: Orbital competition, magnetism, and phase stability10.1103/PhysRevB.86.235103 ↗

58. D. Lee, B. Chung, Y. Shi, G.Y. Kim, N. Campbell, F. Xue, K. Song, S.Y. Choi, J.P. Podkaminer, T.H. Kim, P.J. Ryan, J.W. Kim, T.R. Paudel, J.H. Kang, J.W. Spinuzzi, D.A. Tenne, E.Y. Tsymbal, M.S. Rzchowski, L.Q. Chen, J. Lee, C.B. Eom, Isostructural metal-insulator transition in VO2, Science. 362 (2018) 1037–1040. Doi: 10.1126/science.aam9189. (80-.).10.1126/science.aam9189 ↗

59. Electric-field-driven phase transition in vanadium dioxide10.1103/PhysRevB.84.241410 ↗

60. Direct observation of the electrically triggered insulator-metal transition in V3O5 far below the transition temperature

61. Current-driven insulator-to-metal transition in strongly correlated VO210.1103/PhysRevApplied.11.014059 ↗

62. Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices10.1063/1.1941478 ↗

63. Local phenomena at grain boundaries: An alternative approach to grasp the role of oxygen vacancies in metallization of VO2

64. J. Jeong, N. Aetukuri, T. Graf, T.D. Schladt, M.G. Samant, S.S.P. Parkin, Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation, Science. 339 (2013) 1402–1405. Doi: 10.1126/science.1230512. (80-.).10.1126/science.1230512 ↗

65. Size and crystallinity control of dispersed VO2 particles for modulation of metal-insulator transition temperature and hysteresis10.1039/C9CE01013K ↗