Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024)

Spin-Orbit Torque MRAM The spin-orbit torque magnetoresistive random access memory (SOT-MRAM) is one of the promising candidates for realizing fast and reliable non-volatile memory. Spin Hall material, which is a key source for writing operations, needs to satisfy several requirements, such as the giant spin Hall effect and high thermal annealing stability, to develop SOT-MRAM for practical application. In article 2300581, Yuki Hibino and co-workers present amorphous W-Ta-B alloys as a solution to simultaneously satisfy the above requirements and demonstrate low-energy efficient writing in three-terminal SOT-MRAM cells. Amorphous spin Hall material opens a route to promoting the practical application of SOT-MRAM.