The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices (Adv. Electron. Mater. 1/2024)
Source abstract
Abstract
Memristive Devices In article number 2300635, Benjamin Spetzler and co-workers introduce a dynamic charge transport model to investigate memristive switching mechanisms in two-dimensional transition metal dichalcogenides (TMDCs). The study highlights the central role of defect dynamics in hysteresis and pulse measurements, offering exciting insights for future advancements in TMDC memristive devices for neuromorphic computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · CCD and CMOS Imaging Sensors · Photoreceptor and optogenetics research
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Affiliations
Micro‐ and Nanoelectronic Systems Department of Electrical Engineering and Information Technology Technische Universität Ilmenau Ehrenbergstraße 29 98693 Ilmenau Germany
Institute of Micro and Nanotechnologies MacroNano Technische Universität Ilmenau Ehrenbergstraße 29 98693 Ilmenau Germany
Numerical Methods for Innovative Semiconductor Devices Weierstrass Institute for Applied Analysis and Stochastics (WIAS) Mohrenstraße 39 10117 Berlin Germany
References
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