journal article·2024-01Open access

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging (Adv. Electron. Mater. 1/2024)

Matthew Flynn‐Hepford, John Lasseter, Ivan Kravchenko, Steven Randolph, Jong Keum, Bobby G. Sumpter, Stephen Jesse, Petro Maksymovych, A. Alec Talin, Matthew J. Marinella, Philip D. Rack, Anton V. Ievlev, Olga S. Ovchinnikova

Advanced Electronic Materials· Volume 10· Issue 1

Abstract

Memristive Mechanisms In article number 2300589, Olga S. Ovchinnikova and co-workers image charge trapping and ionic motion with multimodal imaging techniques to elucidate the mechanisms that drive reversable resistive switching in amorphous Ta2O5/Ta/TiN films. In-situ conductive-AFM and secondary ion mass spectrometry are utilized, along with complementary ion beam irradiation, to visualize oxygen motion within the active layers.
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Research context

OpenAlex topics: Ion-surface interactions and analysis · Advanced Memory and Neural Computing

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Affiliations

Department of Materials Science & Engineering University of Tennessee Knoxville 37916 TN USA

Center for Nanophase Materials Sciences Oak Ridge 37830 TN USA

Neutron Scattering Division Oak Ridge 37830 TN USA

Sandia National Laboratory Livermore 94551 CA USA

Department of Electrical Computer and Energy Engineering Arizona State University Tempe 58287 Arizona USA

References

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