Low noise bipolar complementary metal–oxide–semiconductor mixer for radio frequency applications
Source abstract
Abstract
This article presents a low IF mixer featuring metal–oxide–semiconductor devices in the rf and the active load stages for DCS applications which have been optimized with respect to the supply voltage (2.2 V), current consumption (<10 mA), gain (10 dB), linearity (IIP3=8.5 dBm), and noise (DSB Nf=13 dB at 100 kHz). Special attention has been paid to the identification of the noise mechanisms.
Source: crossref · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Radio Frequency Integrated Circuit Design · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
LAAS-CNRS, 7 Av du Colonel Roche, 31077 Toulouse, Cedex 04, France
References (6)
Show source-provided references
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6. IEEE J. Solid-State Circuits · 1997 · 32 · 206110.1109/4.643664 ↗