Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022)

Cu-Cone Devices In the Cu-cone structure embedded conductive bridge random access memory (CBRAM) proposed in this study, the single conductive filament growth is induced by the electric field concentration effect. The controllability of resistance and filament dynamics are improved, which allows the formation of multiple resistance states. The potentiation/depression behaviors could be emulated, and the feasibility as an artificial synapse is demonstrated. More details can be found in article number 2100209 by Jung Ho Yoon, Cheol Seong Hwang, and co-workers.