journal article·2022-07

Room‐Temperature Non‐Local Spin Transport in Few‐Layer Black Phosphorus Passivated with MgO (Adv. Electron. Mater. 7/2022)

Chexin Li, Xiaoguang Xu, Yingli Ma, Bing Zhao, Tanzhao Zhang, Le Wang, Yong Wu, Kangkang Meng, Jikun Chen, Yong Jiang

Advanced Electronic Materials· Volume 8· Issue 7
Publisher page

Abstract

Black Phosphorus Passivated with MgO In article number 2101048, Chexin Li, Xiaoguang Xu, Yong Jiang, and co-workers report that black phosphorus (BP) is passivated from H2O and O2 by a thin oxide layer (MgO) which serves as the barrier at the same time to improve the efficiency of spin injection. The passivated BP-based non-local devices show good spin transport performance and are greatly simplified for real applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Magnetic properties of thin films

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