Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid Memristors by Vapor‐Phase Infiltration (Adv. Electron. Mater. 7/2022)

Organic-Inorganic Hybrid Resistive Random-Access Memory In article number 2200172, Ashwanth Subramanian, Chang-Yong Nam, and co-workers develop a new organic-inorganic hybrid resistive switching medium for memristor applications by using vaporphase infiltration, an ex-situ inorganic hybridization method derived from atomic layer deposition. The hybridization not only enables control over switching parameters but also reduces their stochastic variability. By controlling compliance current, multi-state analog switching is demonstrated for potential neuromorphic computing.