Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing
Source abstract
Abstract
Abstract This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of Korea
Funding
National Research Foundation of Korea · Samsung · Korea University
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