Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Abstract One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer‐based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7‐nm‐thick copolymer ReRAM device exhibits endurance properties as high as 10⁵ and switching power as low as 438 µW. The strong endurance of the copolymer‐based ReRAM device originates from the properties of the robust poly‐1,3,5‐trivinyl‐trimethyl‐cyclotrisiloxane dielectric film, while its low on‐current at the operating voltage is attributed to the properties of the poly‐2‐hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming‐free switching characteristics.