Selective Etching of SiGe on SiGe / Si Heterostructures
Source abstract
Abstract
The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid is studied as a selective etchant of over Si. It is found that the solution has a very high selectivity of etching over Si. Etch rates for various samples with differing mole fractions of are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90024
References
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