Preparation and Photovoltaic Properties of Ternary AgBiS₂Quantum Dots Sensitized TiO₂Nanorods Photoanodes by Electrochemical Atomic Layer Deposition

Ternary AgBiS 2 quantum dots (QDs) were assembled onto TiO 2 nanorods (NRs) film for QD-sensitized solar cell (QDSSC) application by a simple electrochemical atomic layer deposition method (ECALD). Various kinds of methods such as XRD, SEM, EDX and TEM were employed to characterize the structure and morphology of the deposits. The results indicate that stoichiometric AgBiS 2 QDs of cubic structure were synthesized and homogeneously anchored on the TiO 2 NRs. Furthermore, the optical absorbance of AgBiS 2 sensitized TiO 2 NRs was greatly enhanced in visible region compared to that of bare TiO 2 . The QDSSCs based on the AgBiS 2 sensitized TiO 2 NRs photoanodes were constructed and a maximum photoconversion efficiency of 0.95% with a short-circuit current density of 4.22 mA/cm 2 , an open-circuit voltage of 0.53 V and a fill factor of 0.43, has been achieved. The inspiring parameters demonstrate that AgBiS 2 QDs can be a prospective light absorber in solar cells.