article·2010-12-06

Electronic Properties of Silicene: Insights from First-Principles Modeling

Michel Houssa, Geoffrey Pourtois, M. M. Heyns, V. V. Afanas’ev, A. Stesmans

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Abstract

The electronic properties of two dimensional hexagonal silicon (silicene) are investigated using first-principles simulations. Though silicene is predicted to be a gapless semiconductor due to the -hybridization of the Si atoms, the weak overlapping between their orbitals leads to a very reactive surface, resulting in a more energetically stable semiconducting surface upon the adsorption of foreign chemical species. It is predicted that silicene inserted into a graphitelike lattice, such as ultrathin AlN stacks, preserves its -hydridization and hence its graphenelike electronic properties.
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Research context

OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Topological Materials and Phenomena

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