The Investigation of Current Doubling Reactions on Semiconductor Photoelectrodes by Temperature Change Measurements

Current doubling effects in the photoanodic reactions of or on n‐type semiconductor electrodes ( , , and ) and the photocathodic reaction of on a p‐type semiconductor were studied by the measurement of the temperature change of a semiconductor electrode surface. The results of the temperature change measurements show that these photoelectrode reactions proceed with quantum efficiencies greater than 1 but less than 2. The temperature changes are interpreted in terms of the current doubling process.