Minority Carrier Diffusion Length Mapping in Silicon Wafers Using a Si‐Electrolyte‐Contact
Source abstract
Abstract
A method has been developed to determine the minority carrier diffusion length and its lateral distribution in considerable detail by measuring the back‐surface photocurrent (BPC) of a semiconductor. The wafer is illuminated with a laser at the front side and is provided with electrolyte‐contacts on both sides.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Thin-Film Transistor Technologies
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Affiliations
Siemens AG, Technology Center for Microelectronics, D‐8000 München 83, Germany
References
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