journal article·1977-09-01Open access

The Rate of the Photoelectrochemical Generation of Hydrogen at p‐Type Semiconductors

J. O'M. Bockris, K. Uosaki

Abstract

The current‐potential relations with and without illumination, quantum efficiency‐wavelength relations at several potentials, the flatband potentials, the transient behavior, and the stability of seven p‐type semiconductors, i.e. , , , , , , , and Si, have been measured in and . The position of the photocurrent‐potential relations are related to the flatband potential and the energy gap of the semiconductor. The existence of the maximum in quantum efficiency‐wavelength relation is analyzed by considering surface recombination. The stability and the transient behavior are analyzed.
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Research context

OpenAlex topics: Surface and Thin Film Phenomena · Chalcogenide Semiconductor Thin Films · Chemical and Physical Properties of Materials

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Affiliations

School of Physical Sciences, Flinders University, Adelaide, Australia 5042

References

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