Semiconductor Properties of Iron Oxide Electrodes
Source abstract
Abstract
The semiconductor electrode properties of thermally grown iron oxide and anodic oxide films on iron are compared. The bandgaps are 2.1 and 1.9 eV, respectively. Donor densities and flatband potentials are reported. Measurement of the currents produced by chopped illumination has allowed evaluation of electrode parameters and determination of reaction pathways.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Iron oxide chemistry and applications · Electrochemical Analysis and Applications · Corrosion Behavior and Inhibition
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Affiliations
Department of Chemistry, Rice University, Houston, Texas 77001
References
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