Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

Solution-processed indium gallium zinc oxide (IGZO) thin films as an active channel layer in thin-film transistors (TFTs) were successfully prepared by a spin-coating method using acetate- and nitrate-based precursors. In the range of , indium, gallium, and zinc precursors were dissociated and then hydrolyzed to metal hydroxides. compound was synthesized at and crystallized at . A spin-coated IGZO film annealed at had smooth morphology and fine grains with an average size of . In solution-processed IGZO TFTs using nanocrystalline films prepared at , the on-to-off ratio, a field effect mobility, and the subthreshold swing voltage were , , and /decade, respectively.