Cathodic Deposition of CdTe from Aqueous Electrolytes
Source abstract
Abstract
of well‐defined composition has been deposited cathodically from an aqueous solution of and . Films with a rest potential of < −0.3V vs. SCE are n‐type, those with a rest potential > −0.3V vs. SCE are p‐type semiconductors. The rate of deposition increases with stirring rate; it is proportional to the concentration but independent of the concentration. Films deposited at room temperature are amorphous, those deposited at higher temperatures are partly crystalline, the degree of crystallinity increasing with deposition temperature. Grain sizes are in the range 500–1000Å. Annealing at 350°C causes the crystallite size to increase to ≥0.5 μm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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Affiliations
Department of Materials Science, University of Southern California, Los Angeles, California 90007
References
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