Oxygen incorporation in directional solidification of photovoltaic silicon: Experimental facts and modeling
Source abstract
Abstract
Abstract Oxygen, an usual impurity of photovoltaic silicon, is known to be detrimental for the electrical performances of this material. In this investigation, solidification experiments are performed in coated silica crucibles in order to study the influence of crucible size, crucible coating, argon flow and crucible material on silicon contamination by oxygen. In order to interpret the results, an analytical, semi-quantitative model is established taking into account two oxygen flows: the contamination flow at the crucible/silicon interface and the evacuation flow at the silicon free surface.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. Initial stages of silicon-crucible interactions in crystallization of solar grade silicon: kinetics of coating infiltration10.1016/j.actamat.2014.04.072 ↗
2. G. Rancoule, Crucible for the crystallisation of silicon and process for making the same, US Patent 8298332B2.
3. Influence of the coating preparation method and of nanosilica addition on the bonding character of Si3N4 layer on silica crucible10.1016/j.ceramint.2013.12.104 ↗
4. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon10.1063/1.371186 ↗
5. Directional solidification of photovoltaic silicon in re-useable crucibles10.1016/j.solmat.2020.110637 ↗
6. Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingot10.1016/j.jcrysgro.2021.126178 ↗
7. Reduction of oxygen impurity in multicrystalline silicon production10.1155/2013/908786 ↗
8. The effect of heating power on impurity formation and transport during the holding phase in a Bridgman furnace for directional solidification of multi-crystalline silicon10.1016/j.jcrysgro.2016.03.036 ↗
9. Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth10.1016/j.jcrysgro.2012.02.004 ↗
10. The crucible/silicon interface in directional solidification of photovoltaic silicon10.1016/j.actamat.2017.02.072 ↗
11. Improved mc-Si crystal growth control through multiple heat zones and heat sink design
12. Chemical stability of silicon nitride coatings used in the crystallization of photovoltaic silicon ingots. Part I: Stability in vacuum10.1016/j.jeurceramsoc.2016.07.019 ↗
13. Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cell10.1016/j.jcrysgro.2007.12.017 ↗
14. Mechanisms of oxygen transfer from the releasing coating into the melt during Si ingot crystallization
15. Thermodynamics and phase stability in the Si-O system10.1016/j.jnoncrysol.2003.12.057 ↗
16. The viscosity of liquid metals and alloys10.1016/0001-6160(89)90064-3 ↗
17. Active oxidation of SiC10.1007/s11085-010-9216-4 ↗
18. Chase · 1998
19. Incropera · 1996 · 391