NiSi2/Si interface chemistry and epitaxial growth mode

In recent years, lts of efforts have been contributed to produce epitaxial thin films of transition metal silicides on silicon substrate for fundamental studies on electrical and structural properties of interface, as well as for application as Schottky and ohmic contacts on silicon-based devices [1–3]. Since the electronic properties in metal/semiconductor junctions strongly depend on the interface structure, i.e., coordination of metal atoms, reconstruction and defects at the interface, it is of great interest to exploring the atomic structure of the interface.