Edge dislocation with [001] b→ induced positive magnetoresistance in BaTiO3/La0.66Sr0.33MnO3 heterostructure

The magnetoresistance (MR) effect holds immense potential for applications in various fields, including but not limited to storage and sensing. Manganese oxide has garnered significant attention due to its colossal magnetoresistance characteristics. Investigating the effects of the complex magnetic interactions on the magnetism and transport enables a better understanding of magnetic materials. La _0.66Sr _0.33MnO ₃ (LSMO) manganese oxides typically exhibiting negative MR as a result of magnetic field-induced spin order, while positive MR typically occurs in systems with spin-orbit coupling (SOC) or P-N junctions. In this work, the magnetic and transport properties of BaTiO ₃ (BTO)/LSMO heterostructure were studied. By introducing edge dislocation with [001] b → (burgers vector) in BTO, the c -axis lattice constant is increased, resulting in positive MR in LSMO, which could be modulated by the magnetic field history and the annealing temperature. The nonlinear magnetic order induced by antiferromagnetism at the interface is proposed to cause the positive MR. Finally, the influence of ferroelectric layer on MR could be controlled by the ferroelectric BTO film. The increase in the large lattice constant and the observed variations in MR under magnetic field and annealing temperature provide valuable insights for further studies on the complex oxide.