journal article·2013-11

Electrical properties of La0.6Ca0.4MnO3–Bi3.4Nd0.6Ti3O12 thin films derived by a sol–gel process

C. P. Cheng, M. H. Tang, Z. H. Tang, Y. C. Zhou

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Abstract

Magnetoelectric (ME) xLa0.6Ca0.4MnO3–(1 − x)Bi3.4Nd0.6Ti3O12 (LCMO–BNT) composite thin films have been prepared by a sol–gel process and spin-coating technique. The effects of LCMO content on the microstructure, leakage current density, ferroelectric properties, fatigue endurance and ME voltage coefficient of LCMO–BNT thin films derived by sol–gel method were studied. It was found that the composite thin films have better fatigue endurance properties and lower leakage current densities compared with pure BNT thin films, as well as large ME voltage coefficients.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials

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References (30)

Show source-provided references
1. Spaldin NA, Fiebig M (2005) Science 309:39110.1126/science.1113357 ↗
2. Nan CW, Bichurin MI, Dong SX, Viehland D, Srinivasan G (2008) J Appl Phys 103:03110110.1063/1.2836410 ↗
3. Eerenstein W, Mathur ND, Scott JF (2006) Nature 422:75910.1038/nature05023 ↗
4. Scott JF (2007) Nat Mater 6:25610.1038/nmat1868 ↗
5. Levin I, Li JH, Slutsker J, Roytburd AL (2006) Adv Mater 18:204410.1002/adma.200600288 ↗
6. Gehring GA (1994) Ferroelectrics 161:27510.1080/00150199408213376 ↗
7. Suchetelene Van (1972) J Philips Res Rep 27:28
8. Zhao HQ, Peng X, Zhang LX, Chen J, Yan WS (2013) Appl Phys Lett 103:08290410.1063/1.4819386 ↗
9. Gatel C, Warot-Fonrose B, Matzen S, Moussy JB (2013) Appl Phys Lett 103:09240510.1063/1.4819178 ↗
10. Qi XW, Zhou J, Yue ZX, Gui ZL, Li LT, Buddhudu SA (2004) Adv Funct Mater 14:92010.1002/adfm.200305086 ↗
11. Dai YR, Bao P, Zhu JS, Wan JG, Shen HM, Liu JM (2004) J Appl Phys 96:568710.1063/1.1805187 ↗
12. Ryu J, Carazo AV, Uchino K, Kim HE (2001) Jpn J Appl Phys Part 1(40):494810.1143/JJAP.40.4948 ↗
13. Srinivasan G, Rasmussen ET, Gallegos J, Srinivasan R, Bokhan YuI, Laletin VM (2001) Phys Rev B 64:21440810.1103/PhysRevB.64.214408 ↗
14. He HC, Zhou JP, Wang J, Nan CW (2006) Appl Phys Lett 89:05290410.1063/1.2269705 ↗
15. Zhou JP, He HC, Shi Z, Nan CW (2006) Appl Phys Lett 88:01311110.1063/1.2162262 ↗
16. Wan JG, Wang XW, Wu YJ, Zeng M, Wang Y, Jiang H, Zhou WQ, Wang GH, Liu JM (2005) Appl Phys Lett 86:12250110.1063/1.1889237 ↗
17. Ryu H, Murugavel P, Lee JH, Chae SC, Noh TW, Oh YS, Kim HJ, Kim KH, Jang JH, Park JG (2006) Appl Phys Lett 89:10290710.1063/1.2338766 ↗
18. Maiwa H, Iizawa N, Togawa D, Hayashi T, Sakamoto W, Yamada M, Hirano SI (2003) Appl Phys Lett 82:176010.1063/1.1560864 ↗
19. Wu D, Li AD, Ming NB (2004) J Appl Phys 95:427510.1063/1.1655678 ↗
20. Chon U, Jang HM, Kim MG, Chang CH (2002) Phys Rev Lett 89:08760110.1103/PhysRevLett.89.087601 ↗
21. Zhong XL, Wang JB, Liao M, Huang GJ, Xie SH, Zhou YC (2007) Appl Phys Lett 90:15290310.1063/1.2709946 ↗
22. Devan RS, Chougule BK (2007) J Appl Phys 101:01410910.1063/1.2404773 ↗
23. Zhou Y, Shin FG (2006) J Appl Phys 100:04391010.1063/1.2245194 ↗
24. Wang SY, Cheng BL, Wang C, Dai SY, Lu HB, Zhou YL, Chen ZH, Yang GZ (2004) Appl Phys Let 84:411610.1063/1.1755421 ↗
25. Ahn KH, Baik S, Kim SS (2002) J Appl Phys 92:265
26. Zhong XL, Wang JB, Zheng XJ, Zhou YC, Yang GW (2004) Appl Phys Lett 85:566110.1063/1.1834731 ↗
27. Majumder SB, Mohapatra YN, Agrawal DC (1997) Appl Phys Lett 70:13810.1063/1.119287 ↗
28. Klissurska RD, Brooks KG, Setter N (1999) Ferroelectrics 225:17110.1080/00150199908009125 ↗
29. Zhou JP, He HC, Shi Z, Liu G, Nan CWJ (2006) Appl Phys 100:09410610.1063/1.2358191 ↗
30. Nan CW (1994) Phys Rev B 50:608210.1103/PhysRevB.50.6082 ↗