Ferroelectricity of highly preferentially oriented (BiFeO3)1−x –(BaTiO3) x solid solution film by sol–gel method

(BiFeO3)1−x –(BaTiO3) x solid solution thin films are grown on Pt/Ti/SiO2/Si substrates by chemical solution deposition method. Films with x = 0.00, 0.05 and 0.10 were prepared by annealing at 500°C. X-ray diffraction patterns indicate that the pure BiFeO3 film adopts random orientation while the solid solution films are highly (100) preferentially oriented. Improved electric property at room temperature was observed in the BaTiO3 incorporated BiFeO3 films. The remanent polarization of the film with x = 0.0, 0.05 and 0.10 are 76.6, 51.9 and 19.7 μC/cm2 respectively under a measuring electric field of 0.94 MV/cm. The BaTiO3 incorporated BiFeO3 films show improved fatigue endurance. By the solid solution with BaTiO3, the leakage current density is reduced effectively.