The effect of Mn/Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process
Source abstract
Abstract
Mn/Nb-doped lead zirconate titanate thin films (PMZT/PNZT) were fabricated by sol–gel process. The effects of Mn/Nb dopant on the phase development, microstructure, ferroelectric and dielectric characteristics of films were studied systematically. For PMZT films, the ferroelectric and dielectric properties were found to deteriorate at low Mn concentration (1 %), while improve slightly as the doping level increased to 2 %. On the other hand, for PNZT films, the optimum doping level was found to be 2 %. The remnant polarization (2Pr) and coercive field (2Ec) were ~50 μC/cm2 and ~63 kV/cm, respectively. In addition, the maximum dielectric constant was found to be 1,630 for 2 % Nb doped films. The ferroelectric and dielectric properties were found to decrease as the increase of Nb doping level (~4 %), due to the fact that the excess Nb would accumulate at grain boundary, hinder the grain growth and decrease the grain size. The improved performance make Mn/Nb doped PZT thin films a promising ferroelectric material for practical applications.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Dielectric materials and actuators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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